Title :
Millimeter-wave silicon transistor and benchmark circuit scaling through the 2030 ITRS horizon
Author :
Voinigescu, S.P. ; Shopov, S. ; Chevalier, P.
Author_Institution :
ECE Dept., Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper reviews the technology requirements of future mm-wave systems-on-chip and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling towards 3nm gate length and beyond 1.5THz fMAX. Measurements of state-of-the-art MOSFETs, HBTs and cascodes are presented from DC to 325 GHz. Finally, simulations of the scaling of the SiGe HBT mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% PAE at 220 GHz, and transimpedance amplifiers with over 175GHz bandwidth and less than 3dB noise figure will become feasible by the year 2030.
Keywords :
Ge-Si alloys; MOSFET; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; operational amplifiers; semiconductor device models; system-on-chip; HBT device; SiGe; benchmark circuit scaling; frequency 220 GHz; heterojunction bipolar transistors; millimeter-wave silicon transistor; mm-wave MOSFET; mm-wave benchmark circuit; mm-wave systems-on-chip; noise figure; size 3 nm; transimpedance amplifiers; Benchmark testing; Heterojunction bipolar transistors; Logic gates; MOSFET; Silicon; Silicon germanium; MOSFET; PA; SOI; SiGe HBT; TIA; VCO; benchmark circuits; mm-wave;
Conference_Titel :
Millimeter Waves (GSMM), 2015 Global Symposium On
Conference_Location :
Montreal, QC
DOI :
10.1109/GSMM.2015.7175460
