Chemical beam epitaxy of pseudomorphic InGaAs/InP bidimensional electron gas

Author

Carlin, J.-F. ; Rudra, A. ; Ilegems, M.

Author_Institution

Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

545

Lastpage

548

Abstract

InP/InGaAs/InP HEMTs are an interesting alternative to the conventional InAlAs/InGaAs/InP system because they avoid a number of problems related to the presence of aluminum. To date, the former heterostructure has been grown using MOVPE at temperatures above 600°C. For highly strained layers, however, a low temperature growth technique should yield the ultimate performance. In this work, we explore the capabilities of chemical beam epitaxy (CBE) at growth temperatures between 450°C and 525°C. We examine the influence of growth parameters on the crystalline quality of InGaAs/InP pseudomorphic quantum wells and on the transport properties of the two dimensional electron gas

Keywords

III-V semiconductors; X-ray diffraction; carrier mobility; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wells; two-dimensional electron gas; 450 to 525 degC; CBE; HEMT; InGaAs-InP; chemical beam epitaxy; crystalline quality; growth parameters; growth temperatures; heterostructure; highly strained layers; low temperature growth technique; pseudomorphic InGaAs/InP bidimensional electron gas; pseudomorphic quantum wells; transport properties; Aluminum; Chemicals; Epitaxial growth; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492304

Filename

492304