Title :
Photoreflectance study of surface Fermi level of InAlAs after sulphidation
Author :
Baltagi, Y. ; Bru-Chevallier, C. ; Guillot, G. ; Leclercq, J.L.
Author_Institution :
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France
Abstract :
The aim of the present study is to study by the photoreflectance (PR) technique, the influence of sulphidation treatments, which have been successfully applied to the passivation of GaAs surfaces, on the Fermi level pinning of InAlAs. It is of considerable interest since it can give contactless surface Fermi level position through the exploitation of Franz Keldysh oscillations
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; indium compounds; passivation; photoreflectance; reflectivity; surface states; surface treatment; Fermi level pinning; Franz Keldysh oscillations; InAlAs; S; contactless surface Fermi level position; passivation; photoreflectance study; sulphidation; sulphidation treatment; surface Fermi level; Doping; Etching; Fabrication; Gallium arsenide; Indium compounds; Laser beams; Laser excitation; Passivation; Surface treatment; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492315
