• DocumentCode
    3386035
  • Title

    Low temperature direct wafer bonding of silicon using a glass intermediate layer

  • Author

    Dragoi, V. ; Alexe, M. ; Reiche, M. ; Gösele, U.

  • Author_Institution
    Max Planck of Microstruct. Phys., Halle, Germany
  • Volume
    2
  • fYear
    1999
  • fDate
    36434
  • Firstpage
    443
  • Abstract
    Low temperature wafer bonding is desirable to bond processed wafers or dissimilar materials. The present paper proposes a low temperature silicon-to-silicon bonding process using a spin-on glass as intermediate layer. The interface bonding energy after annealing at 200°C is about 2.3 J/m2 and proved to be sufficient to allow further mechanical processing
  • Keywords
    annealing; elemental semiconductors; silicon; wafer bonding; 200 degC; Si; Si-Si bonding; annealing; direct wafer bonding; glass intermediate layer; interface bonding energy; mechanical processing; spin-on glass; Annealing; Bonding processes; Elementary particle vacuum; Glass; Semiconductor materials; Silicon; Temperature; Thermal decomposition; Thermal stresses; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810582
  • Filename
    810582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3386035