Laser assisted deposition of mercury chalcogenides thin films in chemically reactive environment

Author

Kotlyarchuk, B.K. ; Popovych, D.I. ; Savchuk, V.K.

Author_Institution

Inst. of Appl. Problems of Mech. & Math., Acad. of Sci., Lviv, Ukraine

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

11

Lastpage

12

Abstract

The results of an experimental study of major physico-technological considerations of thin film structure formation and elemental composition at laser vaporization and deposition of thin CdHgTe and MnHgTe films in a chemically reactive environment are presented. The laser vaporization and condensation took place in the mercury vapour (P=10/sup -1/-10/sup 3/ Torr). Presynthesized CdTe-Te(MnTe-Te) or Te plates were used as targets. A laser with /spl tau/=50-100 ns generation pulse duration, density of vaporization pulse power q=10/sup 8/-10/sup 9/ W/cm/sup 2/, was used for vaporization of the target material.

Keywords

II-VI semiconductors; cadmium compounds; manganese compounds; mercury compounds; pulsed laser deposition; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; stoichiometry; 1E-1 to 1E3 torr; 50 to 100 ns; CdHgTe; MnHgTe; chemically reactive environment; condensation; elemental composition; laser assisted deposition; laser vaporization; pulse power; structure formation; thin films; Chemical elements; Chemical lasers; Laser theory; Optical materials; Optical pulse generation; Power generation; Power lasers; Pulsed laser deposition; Sputtering; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540657

Filename

540657