Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

Author

Tiginyanu, I.M. ; Miao, J. ; Hartnagel, H.L. ; Rück, D. ; Tinschert, K. ; Ursaki, V.V. ; Ichizli, C.M.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

598

Lastpage

601

Abstract

The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the lattice was probed by resonant Raman scattering (RS) measurements. Layers with resistivity as high as 10⁴ Ω.cm were formed by implantation and subsequent annealing of the samples which allowed one to fabricate InP membranes for sensor applications by using selective electrochemical etching techniques

Keywords

III-V semiconductors; Raman spectra; annealing; crystal structure; electrical resistivity; electrochemistry; etching; indium compounds; ion implantation; nitrogen; semiconductor doping; 10E4 ohmcm; InP membranes; InP:N; N-implantation; Raman characterization; annealing; conductivity compensation; electrical characterization; ion-induced damage; lattice disorder; liquid encapsulated Czochralski grown n-InP single crystals; n-InP; resistivity; resonant Raman scattering; selective electrochemical etching techniques; sensor applications; Annealing; Conducting materials; Conductivity; Etching; Indium phosphide; Lattices; Nitrogen; Ohmic contacts; Plasma measurements; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492319

Filename

492319