Title :
Raman and electrical characterization of n-InP implanted by 630-keV nitrogen
Author :
Tiginyanu, I.M. ; Miao, J. ; Hartnagel, H.L. ; Rück, D. ; Tinschert, K. ; Ursaki, V.V. ; Ichizli, C.M.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Abstract :
The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the lattice was probed by resonant Raman scattering (RS) measurements. Layers with resistivity as high as 104 Ω.cm were formed by implantation and subsequent annealing of the samples which allowed one to fabricate InP membranes for sensor applications by using selective electrochemical etching techniques
Keywords :
III-V semiconductors; Raman spectra; annealing; crystal structure; electrical resistivity; electrochemistry; etching; indium compounds; ion implantation; nitrogen; semiconductor doping; 10E4 ohmcm; InP membranes; InP:N; N-implantation; Raman characterization; annealing; conductivity compensation; electrical characterization; ion-induced damage; lattice disorder; liquid encapsulated Czochralski grown n-InP single crystals; n-InP; resistivity; resonant Raman scattering; selective electrochemical etching techniques; sensor applications; Annealing; Conducting materials; Conductivity; Etching; Indium phosphide; Lattices; Nitrogen; Ohmic contacts; Plasma measurements; Plasma temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492319
