Study of defect structures in MLEK grown InP single crystals by synchrotron white beam X-ray topography

Author

Si, W. ; Chung, H. ; Dudley, M. ; Anselmo, A. ; Bliss, D.F. ; Prasad, V.

Author_Institution

Dept. of Mater. Sci. & Eng., State Univ. of New York, Stony Brook, NY, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

610

Lastpage

613

Abstract

The application of synchrotron white beam X-ray topography (SWBXT) as a non-destructive diagnostic technique to the characterization of defect structures in large size InP single crystals was presented. Various kinds of defect configurations, including slip bands, micro-twin lamellae, growth striations, individual dislocations, and precipitates, were revealed. The relationship between defect formation and growth conditions was briefly discussed

Keywords

III-V semiconductors; X-ray diffraction; X-ray topography; crystal growth from melt; dislocations; indium compounds; kink bands; precipitation; semiconductor growth; twin boundaries; InP; MLEK grown InP single crystals; SWBXT; defect configurations; defect formation; defect structures; dislocations; growth conditions; growth striations; large size InP single crystals; micro-twin lamellae; nondestructive diagnostic technique; precipitates; slip bands; synchrotron white beam X-ray topography; Crystallization; Crystals; Electron microscopy; Indium phosphide; Laboratories; Optical microscopy; Optical surface waves; Surface topography; Synchrotrons; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492322

Filename

492322