DocumentCode
3386208
Title
Temperature microsensors
Author
Mitin, V.F. ; Kholevchuk, V.V. ; Konakova, R.V. ; Boltovet, N.S.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Volume
2
fYear
1999
fDate
36434
Firstpage
495
Abstract
We have developed and investigated several types of miniature cryogenic resistance thermometers based on germanium films on gallium arsenide and silicon thermodiode temperature sensors. A small-scale production of these devices is organized. The temperature measurement intervals of the resistance thermometers cover the 25 mK to 300 K temperature range, while those of thermodiodes cover the 4 to 600 K temperature range
Keywords
elemental semiconductors; germanium; low-temperature techniques; microsensors; resistance thermometers; silicon; temperature sensors; 25 mK to 300 K; 4 to 600 K; GaAs; Ge; Si; cryogenic resistance thermometer; gallium arsenide substrate; germanium film; silicon thermodiode; temperature measurement; temperature microsensor; Cryogenics; Gallium arsenide; Germanium; Microsensors; Production; Semiconductor films; Silicon; Temperature distribution; Temperature sensors; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810593
Filename
810593
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