Title :
Scanning tunneling microscopy of surface structures of InAs layers on GaAs (001) substrates
Author :
Ikoma, Nobuyuki ; Ohkouchi, Shunsuke
Author_Institution :
Optoelectron. Technol. Res. Lab., Ibaraki, Japan
Abstract :
In this paper, we discuss our investigation of the surface structures of InAs layers on GaAs (001) vicinal substrates under As-stabilized and In-stabilized conditions by scanning tunneling microscopy (STM). The results are discussed along with those for InAs vicinal substrates
Keywords :
III-V semiconductors; indium compounds; scanning tunnelling microscopy; surface structure; As-stabilized conditions; GaAs; GaAs (001) substrates; GaAs (001) vicinal substrates; In-stabilized conditions; InAs; InAs layers; InAs vicinal substrates; InAs-GaAs; STM; scanning tunneling microscopy; surface structures; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Substrates; Surface morphology; Surface reconstruction; Surface structures; Temperature; Thermodynamics; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492324
