Title :
Observation of quantum confined Stark effect in wider quantum wells by a novel photocurrent-difference spectroscopy
Author :
Tanaka, K. ; Kotera, N.
Author_Institution :
Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
Photocurrent-difference spectroscopy has been applied to the determination of the interband optical transition energy in InGaAs/InAlAs multiquantum wells under Stark electric field. The photocurrents were measured using p-i-n junctions including quantum wells in the i-layer. By taking the difference of the two spectra at two different fields, vague photocurrent spectra in 20-nm-wide wells were changed into oscillatory spectra as a function of wavelength. The Stark shift of the peak energy over 43 meV was observed under -3 V bias or the Stark field of 93 kV/cm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface states; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; semiconductor superlattices; -3 V; 20 nm; InGaAs-InAlAs; InGaAs/InAlAs multiquantum wells; Stark electric field; Stark shift; i-layer; interband optical transition energy; oscillatory spectra; p-i-n junctions; photocurrent spectra; photocurrent-difference spectroscopy; photocurrents; quantum confined Stark effect; quantum wells; Indium compounds; Indium gallium arsenide; PIN photodiodes; Photoconductivity; Potential well; Quantization; Quantum well devices; Spectroscopy; Stark effect; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492325