Trap states and their effect on the bias-voltage dependence of PL intensity in InP MIS diodes

Author

Hanajiri, T. ; Katoda, T. ; Matsumoto, Y. ; Sugano, T.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

625

Lastpage

627

Abstract

InP MIS structures with applied bias voltage and irradiation of light were studied. It was found that there is an interesting correlation between the density of trap states and the dependence of PL intensities on the bias voltage. PL intensities were found to be affected by the density-distribution of trap states at surface. This behavior of PL intensities was explained by considering only the dependence of the surface-recombination velocity (SRV) on the bias voltage. Analyzing these phenomena makes it possible to estimate surface recombination velocity (SRV) in MIS structures irradiated by light

Keywords

III-V semiconductors; MIS devices; electron traps; indium compounds; interface states; photodiodes; photoluminescence; spectral line intensity; surface recombination; InP; InP MIS diodes; PL intensities; PL intensity; applied bias voltage; bias voltage; bias-voltage dependence; density-distribution; light irradiation; surface recombination velocity; surface-recombination velocity; trap states; Diodes; Electron traps; Etching; FETs; High speed optical techniques; Indium phosphide; Optical films; Optical scattering; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492326

Filename

492326