Title :
Characteristics of the high-power 980 nm laser diodes with decoupled confinement heterostructure
Author :
Okubo, A. ; Yamada, Y. ; Oeda, Y. ; Igarashi, Koji ; Fujimoto, Takafumi ; Yamada, Y. ; Muro, Keiji
Author_Institution :
Electron. & Inf. Mater. Lab., Mitsui Chem. Inc., Chiba, Japan
Abstract :
Performance of 980-nm high-power InGaAs-AlGaAs laser diodes featuring novel DCH structure is given. A reliability data (50/spl deg/C/70/spl deg/C-300 mW) indicates a potential for telecommunication use. We also achieved 300 mW from fiber module.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser reliability; laser transitions; modules; optical transmitters; semiconductor device reliability; semiconductor lasers; wavelength division multiplexing; 300 mW; 50 C; 70 C; 980 nm; DCH structure; InGaAs-AlGaAs; InGaAs-AlGaAs laser diode; decoupled confinement heterostructure; fiber module; high-power 980 nm laser diodes; optical transmitters; reliability data; telecommunication use; Carrier confinement; Chemical lasers; Diode lasers; Erbium-doped fiber lasers; Fiber lasers; Laser modes; Optical fibers; Optical pumping; Power lasers; Pump lasers;
Conference_Titel :
Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest
Conference_Location :
San Diego, CA, USA
Print_ISBN :
1-55752-582-X
DOI :
10.1109/OFC.1999.767782
