DocumentCode :
3386317
Title :
Influence of the Al mole fraction on microwave noise performance of AlxGa1-xN/GaN HEMTs
Author :
Xu, Yuehang ; Guo, Yunchuan ; Wu, Yunqiu ; Xu, Ruimin ; Yan, Bo
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
fYear :
2009
fDate :
23-25 July 2009
Firstpage :
759
Lastpage :
761
Abstract :
To reveal the influence of Al mole fraction on the microwave noise performance of AlxGa1-xN/GaN HEMTs, numerical analysis is performed on the intrinsic noise by reducing its value from 35% to 25% and 15% in this paper. A model based on measurement results is used and simulations are carried out by commercial TCAD soft Silvaco Atlas. The I-V curves and both of the gate and drain noise spectral density are calculated and compared at different bias. The results show that the reduction of the Al mole fraction degrades the intrinsic microwave noise behavior of HEMT´s only at high bias currents due to the poor carrier confinement. The AlGaN/GaN HEMTs with 25 % Al content has the best minimum noise figure (Fmin) at low bias currents due to the reduction of gate noise, and it has the same Fmin with 35% at a few higher bias current.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; AlxGa1-xN-GaN; HEMT; I-V curves; commercial TCAD soft Silvaco Atlas; microwave noise performance; Acoustical engineering; Artificial intelligence; Degradation; Gallium nitride; HEMTs; MODFETs; Microwave devices; Noise figure; Noise reduction; Numerical analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
Type :
conf
DOI :
10.1109/ICCCAS.2009.5250398
Filename :
5250398
Link To Document :
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