• DocumentCode
    3386321
  • Title

    Preliminary characterization of PbS/Si3N4/Si structure to be used in IR-field effect enhanced photoconductive devices (IR-FEEPD)

  • Author

    Botila, T. ; Pentia, E. ; Pintilie, L. ; Tivarus, C. ; Pintilie, I.

  • Author_Institution
    Nat. Inst. if Mater. Phys., Bucharest, Romania
  • Volume
    2
  • fYear
    1999
  • fDate
    36434
  • Firstpage
    511
  • Abstract
    PbS thin films were deposited on the Si3N4/Si substrates. The electric properties of the sandwich structure, before and after PbS deposition, were investigated using C-V and I-V measurements. It was found that an anomalously high leakage current occurs through the structure after PbS deposition
  • Keywords
    IV-VI semiconductors; lead compounds; photoconducting devices; semiconductor thin films; semiconductor-insulator-semiconductor devices; C-V characteristics; I-V characteristics; IR-FEEPD; IR-field effect enhanced photoconductive device; PbS thin film; PbS-Si3N4-Si; PbS/Si3N4/Si sandwich structure; Si3N4/Si substrate; electrical properties; leakage current; Capacitance-voltage characteristics; Dielectric measurements; Electrodes; Ferroelectric films; Lead; Photoconducting devices; Photoconducting materials; Sputtering; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810597
  • Filename
    810597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3386321