Title :
Porous silicon surface stabilisation by anodic oxidation for optoelectronic applications
Author :
Kleps, Irina ; Angelescu, Anca ; Miu, Mihaela ; Ghita, Mihaela ; Bercu, Mircea
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Electrochemical anodic stabilisation of porous silicon (PS) samples of different porosities (60-85%) was realised. Anodic oxidation by cyclic voltammetry (CV) was used to emphasize the importance of PS post-preparation storage conditions and the influence of the PS morphology. The partially oxidised PS samples were investigated by IR spectroscopy and by electrical measurements
Keywords :
anodisation; electroluminescence; elemental semiconductors; infrared spectra; passivation; porosity; porous semiconductors; silicon; voltammetry (chemical analysis); I-V characteristics; IR spectra; Si; anodic oxidation; cyclic voltammetry; electrical measurements; electrochemical anodic stabilisation; electroluminescence; morphology influence; optoelectronic applications; partially oxidised samples; passivation; porous silicon surface stabilisation; post-preparation storage conditions; quantum efficiency; rectifying behavior; thermionic emission equation; Computer interfaces; Electric variables measurement; Electroluminescence; Human computer interaction; Infrared spectra; Oxidation; Physics; Silicon; Spectroscopy; Surface morphology;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810599
