Title :
Large-signal HEMT modelling, specifically optimized for InP based HEMTs
Author :
Schreurs, D. ; Baeyens, Y. ; van der Zanden, K. ; Verspecht, J. ; Van Hove, M. ; De Raedt, W. ; Nauwelaers, B. ; Van Rossum, M.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits. This clarifies why recently much attention is paid to non-linear HEMT modelling. The existing non-linear HEMT models, however, are elaborated for HEMTs in general and do not address explicitly the specific properties appropriate to InP based HEMTs. This paper summarizes the problem areas inherent to InP based HEMTs that are encountered with the most common non-linear model generation procedure. Adequate solutions to overcome these problems are successfully implemented in a large-signal table based model
Keywords :
III-V semiconductors; equivalent circuits; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; InP; InP based HEMTs; large-signal HEMT modelling; large-signal table based model; nonlinear HEMT modelling; nonlinear model generation procedure; Circuits; FETs; Gallium arsenide; HEMTs; Indium phosphide; Intrusion detection; MMICs; Scattering parameters; Schottky diodes; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492330
