THz Emission Properties of Fe-implanted InGaAs photoswitch excited with 1.5-μm femstosecond fiber laser

Author

Tonouchi, Masayoshi ; Koga, Hiroki ; Suzuki, Masato

Author_Institution

Inst. of Laser Eng., Osaka Univ., Suita

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

146

Lastpage

147

Abstract

Terahertz emission properties of In_0.53Ga_0.47As photoconductive antennas are studied at an excitation wavelength of 1560 nm. To remove a drawback of the leaky photoswitches, we design a new type of structure to increase a maximum application voltage to the switches. The result reveals successful enhancement of the THz radiation amplitude. The emission properties are compared to those from the ordinary type one and 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST).

Keywords

III-V semiconductors; antennas; fibre lasers; gallium arsenide; indium compounds; iron; photoconductivity; submillimetre waves; 4-dimethylamino-N-methyl-4-stilbazolium tosylate; Fe; In_0.53Ga_0.47As; THz radiation amplitude; Thz emission properties; fiber laser; leaky photoswitches; photoconductive antennas; terahertz emission properties; Etching; Fiber lasers; Frequency; Indium gallium arsenide; Laser excitation; Laser theory; Optical fiber communication; Photoconductivity; Switches; Ultrafast optics; 1.5-μm femtosecond laser; In0.53Ga0.47As; photoconductive switch; terahertz time domain spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516432

Filename

4516432