Title :
THz Emission Properties of Fe-implanted InGaAs photoswitch excited with 1.5-μm femstosecond fiber laser
Author :
Tonouchi, Masayoshi ; Koga, Hiroki ; Suzuki, Masato
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita
Abstract :
Terahertz emission properties of In0.53Ga0.47As photoconductive antennas are studied at an excitation wavelength of 1560 nm. To remove a drawback of the leaky photoswitches, we design a new type of structure to increase a maximum application voltage to the switches. The result reveals successful enhancement of the THz radiation amplitude. The emission properties are compared to those from the ordinary type one and 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST).
Keywords :
III-V semiconductors; antennas; fibre lasers; gallium arsenide; indium compounds; iron; photoconductivity; submillimetre waves; 4-dimethylamino-N-methyl-4-stilbazolium tosylate; Fe; In0.53Ga0.47As; THz radiation amplitude; Thz emission properties; fiber laser; leaky photoswitches; photoconductive antennas; terahertz emission properties; Etching; Fiber lasers; Frequency; Indium gallium arsenide; Laser excitation; Laser theory; Optical fiber communication; Photoconductivity; Switches; Ultrafast optics; 1.5-μm femtosecond laser; In0.53Ga0.47As; photoconductive switch; terahertz time domain spectroscopy;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516432
