• DocumentCode
    3386438
  • Title

    SiGe BiCMOS X-Band integrated radiometer

  • Author

    Ducati, F. ; Mazzanti, A. ; Borgarino, M. ; Pifferi, M.

  • Author_Institution
    Dept. of Inf. Eng., Univ. of Modena & Reggio Emilia, Modena
  • fYear
    2008
  • fDate
    Aug. 31 2008-Sept. 3 2008
  • Firstpage
    1257
  • Lastpage
    1260
  • Abstract
    The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC; radiometers; semiconductor materials; BiCMOS x-band integrated radiometer; SiGe; frequency 8 GHz to 10 GHz; monolithic RF front-end; power 0.5 W; size 0.35 mum; BiCMOS integrated circuits; Costs; Fabrication; Germanium silicon alloys; Paper technology; Prototypes; Radio frequency; Radiometry; Silicon germanium; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
  • Conference_Location
    St. Julien´s
  • Print_ISBN
    978-1-4244-2181-7
  • Electronic_ISBN
    978-1-4244-2182-4
  • Type

    conf

  • DOI
    10.1109/ICECS.2008.4675088
  • Filename
    4675088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3386438