Title :
Diagnostics of growth and film properties of amorphous silicon
Author :
Knobloch, J. ; Kuschnereit, R. ; Hess, P.
Author_Institution :
Phys.-Chem. Inst., Heidelberg Univ., Germany
Abstract :
High quality amorphous hydrogenated silicon (a-Si:H) films were deposited by pulsed VUV F/sub 2/ laser CVD (157nm), allowing digital control of the deposition process. The photodeposition was performed in a parallel configuration with an average power of 4 W at a repetition rate of 50 Hz. The source gas was disilane. Nucleation and growth on native oxide-covered Si
Keywords :
Fourier transform spectra; Poisson ratio; Young´s modulus; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogen; infrared spectra; nucleation; pulsed laser deposition; semiconductor growth; semiconductor thin films; silicon; 157 nm; 4 W; FTIR transmission spectroscopy; H-terminated Si(lll); Si:H; amorphous semiconductor; disilane; film thickness; native oxide-covered Si; nucleation; photodeposition; pulsed VUV F/sub 2/ laser CVD; quartz crystal microbalance; thin films; Amorphous silicon; Hydrogen; Optical pulses; Pulsed laser deposition; Rough surfaces; Semiconductor films; Spectroscopy; Substrates; Surface acoustic waves; Surface roughness;
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
DOI :
10.1109/LEOSST.1996.540659
