Diagnostics of growth and film properties of amorphous silicon

Author

Knobloch, J. ; Kuschnereit, R. ; Hess, P.

Author_Institution

Phys.-Chem. Inst., Heidelberg Univ., Germany

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

15

Lastpage

16

Abstract

High quality amorphous hydrogenated silicon (a-Si:H) films were deposited by pulsed VUV F/sub 2/ laser CVD (157nm), allowing digital control of the deposition process. The photodeposition was performed in a parallel configuration with an average power of 4 W at a repetition rate of 50 Hz. The source gas was disilane. Nucleation and growth on native oxide-covered Si

Keywords

Fourier transform spectra; Poisson ratio; Young´s modulus; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogen; infrared spectra; nucleation; pulsed laser deposition; semiconductor growth; semiconductor thin films; silicon; 157 nm; 4 W; FTIR transmission spectroscopy; H-terminated Si(lll); Si:H; amorphous semiconductor; disilane; film thickness; native oxide-covered Si; nucleation; photodeposition; pulsed VUV F/sub 2/ laser CVD; quartz crystal microbalance; thin films; Amorphous silicon; Hydrogen; Optical pulses; Pulsed laser deposition; Rough surfaces; Semiconductor films; Spectroscopy; Substrates; Surface acoustic waves; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540659

Filename

540659