DocumentCode :
3386585
Title :
Effect of reduced current density stress on the results of isothermal electromigration test for Cu single damascene line
Author :
Leong, Kin ; Andrew, Yap ; Lim, Bee Hoon
Author_Institution :
Chartered Semicond. Manuf., Singapore, Singapore
fYear :
2002
fDate :
21-24 Oct. 2002
Firstpage :
62
Lastpage :
66
Abstract :
Isothermal (ISOT) EM tests offer a fast method to evaluate metal EM degradation rate and reduced total test cycle times and costs. As in any highly accelerated testing, "overstressing" is a concern and should be avoided. In this work, we reduced the stress current density required, to achieve the desired self-heating by raising the temperature of the hot chuck. Comparison of various aspects of ISOT results on Cu single damascene lines such as resistance degradation profile, activation energy, and physical failure modes are presented. There is no significant change in these aspects due to reduced current density stress, which suggests no evidence that "over-stress" has occurred.
Keywords :
current density; electromigration; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; Cu; EM degradation rate; ISOT; activation energy; current density stress; highly accelerated testing; hot chuck; isothermal electromigration test; physical failure modes; resistance degradation profile; self-heating; single damascene line; total test cycle times; Circuit testing; Costs; Current density; Degradation; Electromigration; Isothermal processes; Packaging; Stress; Temperature; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
Type :
conf
DOI :
10.1109/IRWS.2002.1194234
Filename :
1194234
Link To Document :
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