Direct correlation of electrical reliability data to SEM analysis for deep trench dielectric weakness

Author

Wühn, Mario ; Diestel, Gunnar ; Obry, Meinhard

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2002

fDate

21-24 Oct. 2002

Firstpage

88

Lastpage

91

Abstract

The dielectric reliability of DRAM deep trenches was evaluated by means of accelerated lifetime tests. It has been demonstrated, that the results of the statistical analysis are very sensitive to process differences. In order to identify those deviations, systematic electrical tests (TDDB, IV, CV sweeps) in combination with failure analyses (SEM) were performed. A direct correlation of poor reliability results and shape deformations of the deep trench bottom was demonstrated.

Keywords

DRAM chips; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; scanning electron microscopy; C-V characteristics; DRAM deep trench; I-V characteristics; SEM analysis; accelerated lifetime testing; dielectric reliability; electrical testing; failure analysis; shape deformation; statistical analysis; time dependent dielectric breakdown; Data analysis; Dielectrics; Failure analysis; Life estimation; Lifetime estimation; Performance evaluation; Random access memory; Shape; Statistical analysis; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2002. IEEE International

Print_ISBN

0-7803-7558-0

Type

conf

DOI

10.1109/IRWS.2002.1194240

Filename

1194240