Title :
The impact of NBTI and HCI on deep sub-micron PMOSFETs´ lifetime
Author :
Jeon, Chul-Hee ; Kim, San-Young ; Kim, Hyun-Soo ; Rim, Chae-bog
Author_Institution :
Samsung Electron. Co., Ltd, Kyunggi-Do, South Korea
Abstract :
There have been new phenomena observed in advanced deep sub-micron CMOS technologies. Threshold voltage shift in deep submicron dual gate PMOSFETs due to negative bias temperature instability (NBTI) has become one of major issues among them in terms of reliability concern. In this work, NBTI and hot carrier injection (HCI) effects on the lifetime of 0.13 μm technology with 1.3 nm-thick gate dielectric were investigated and we found NBTI can be a critical limitation of reliability in advanced deep sub-micron technologies.
Keywords :
MOSFET; hot carriers; semiconductor device reliability; 0.13 micron; deep-submicron CMOS technology; device lifetime; dual-gate PMOSFET; gate dielectric; hot carrier injection; negative bias temperature instability; reliability; threshold voltage; CMOS technology; Degradation; Dielectrics; Hot carriers; Human computer interaction; MOSFETs; Niobium compounds; Stress; Temperature dependence; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194249
