Title :
New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC
Author :
Chen, Wensuo ; Xie, Gang ; Zhang, Bo ; Zehong Li ; Zhao, Mei ; Li, Zehong
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power IC´s process steps, and it is useful for PDP scan driver IC.
Keywords :
driver circuits; insulated gate bipolar transistors; plasma displays; silicon-on-insulator; PDP scan driver IC; SOI substrate; controlled anode LIGBT; insulated-gate bipolar transistor; lateral IGBT structure; on-state voltage drop; Anodes; Bipolar integrated circuits; Conductivity; Driver circuits; Fabrication; Insulated gate bipolar transistors; Laboratories; Numerical simulation; Power integrated circuits; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250427
