Title :
An efficient physically-based MOSFET model for RF circuit design
Author :
El-Sherif, A.Y. ; Ashley, K.L.
Author_Institution :
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
Abstract :
A physically-based non-quasi-static (NQS) MOSFET model has been derived to provide accurate response at high frequencies for deep-submicron devices and long-channel power devices. The model is valid over a wide range of device dimensions and different operating conditions. The model has been evaluated by the comparison of the 50-Ω S parameters obtained by using Berkeley SPICE3 with those measured experimentally.
Keywords :
MOSFET; S-parameters; SPICE; UHF field effect transistors; semiconductor device models; 50 ohm; Berkeley SPICE3; RF circuit design; S parameters; UHF; deep-submicron devices; device dimensions; long-channel power devices; non-quasi-static model; operating conditions; physically-based MOSFET model; Circuit synthesis; Dielectric constant; Dielectric measurements; Equivalent circuits; MOSFET circuits; Power MOSFET; Radio frequency; Scattering parameters; Silicon; Voltage;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.662263
