Title :
Transient sensitivity computation for transistor level analysis and tuning
Author :
Nguyen, T.V. ; O´Brien, P. ; Winston, D.
Author_Institution :
IBM Austin Res. Lab., TX, USA
Abstract :
This paper presents a general method for computing transient sensitivities using both the direct and adjoint methods in event driven controlled explicit simulation algorithms that employ piecewise linear device models. This transient sensitivity capability is intended to be used in a simulation environment for transistor level analysis and tuning. Results demonstrate the efficiency and accuracy of the proposed techniques. Examples are also presented to illustrate how the transient sensitivity capability is used in timing characterization and circuit tuning.
Keywords :
circuit simulation; circuit tuning; discrete event simulation; piecewise linear techniques; semiconductor device models; sensitivity analysis; timing; transient analysis; accuracy; adjoint method; circuit tuning; direct method; efficiency; event driven controlled explicit simulation algorithms; piecewise linear device models; timing characterization; transient sensitivity computation; transistor level analysis; transistor level tuning; Analytical models; Circuit optimization; Circuit simulation; Computational modeling; Delay; Discrete event simulation; Electronic design automation and methodology; Performance analysis; Timing; Transient analysis;
Conference_Titel :
Computer-Aided Design, 1999. Digest of Technical Papers. 1999 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-5832-5
DOI :
10.1109/ICCAD.1999.810634
