Transient sensitivity computation for transistor level analysis and tuning

Author

Nguyen, T.V. ; O´Brien, P. ; Winston, D.

Author_Institution

IBM Austin Res. Lab., TX, USA

fYear

1999

fDate

7-11 Nov. 1999

Firstpage

120

Lastpage

123

Abstract

This paper presents a general method for computing transient sensitivities using both the direct and adjoint methods in event driven controlled explicit simulation algorithms that employ piecewise linear device models. This transient sensitivity capability is intended to be used in a simulation environment for transistor level analysis and tuning. Results demonstrate the efficiency and accuracy of the proposed techniques. Examples are also presented to illustrate how the transient sensitivity capability is used in timing characterization and circuit tuning.

Keywords

circuit simulation; circuit tuning; discrete event simulation; piecewise linear techniques; semiconductor device models; sensitivity analysis; timing; transient analysis; accuracy; adjoint method; circuit tuning; direct method; efficiency; event driven controlled explicit simulation algorithms; piecewise linear device models; timing characterization; transient sensitivity computation; transistor level analysis; transistor level tuning; Analytical models; Circuit optimization; Circuit simulation; Computational modeling; Delay; Discrete event simulation; Electronic design automation and methodology; Performance analysis; Timing; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer-Aided Design, 1999. Digest of Technical Papers. 1999 IEEE/ACM International Conference on

Conference_Location

San Jose, CA, USA

ISSN

1092-3152

Print_ISBN

0-7803-5832-5

Type

conf

DOI

10.1109/ICCAD.1999.810634

Filename

810634