Title :
Effect of floating island thickness and doping concentration in power FLIMOS: 2-D simulation study
Author :
Ye, Hong ; Qiao, Ming ; Su, Wei ; Zhang, Bo
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ronmiddotsp) increases by enlarging dF while Np+ produce little influence on Ronmiddotsp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high, the breakdown voltage (Vbr) degrades by enlarging dF.
Keywords :
MIS devices; electric breakdown; power MOSFET; semiconductor doping; breakdown voltage; doping concentration effect; floating island MOSFET; floating island thickness effect; power FLIMOS; specific on-resistance; Degradation; Doping; Epitaxial layers; Laboratories; MOSFET circuits; Physics; Power MOSFET; Power engineering and energy; Tellurium; Tin;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250430
