Title :
High voltage gate drive IC with a novel NFFP HVI structure
Author :
Wang, Zhuo ; Wang, Meng ; Qiao, Ming ; Zhang, Bo
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V half bridge gate drive IC with the NFFP HVI structure is experimentally realized by using a thin epitaxial high voltage BCD process. Compared with the conventional MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The experimental high side offset voltage of the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.
Keywords :
bridge circuits; driver circuits; electric breakdown; integrated circuit interconnections; power integrated circuits; NFFP HVI structure; epitaxial voltage process; half bridge gate; high-breakdown voltage; high-voltage gate drive IC; high-voltage interconnection; self-shielding structure; voltage 850 V; Avalanche breakdown; Breakdown voltage; Bridge circuits; Contacts; Costs; Electric potential; Electrodes; Logic; Low voltage; MOSFET circuits;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250435
