Title :
A linearization technique for CMOS RF power amplifier with programmable output
Author :
Liu, Zhao ; Yang, Huazhong
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A novel linearization technique for CMOS Class AB power amplifiers (PAs) is presented. The presented technique cancels third-order inter-modulation (IMD3) products of the output power which can be achieved by canceling the negative peak and the positive peak of second-order derivative of gm of the main transistor. Using auxiliary transistors in parallel can effectively flatten second-order derivative of gm while little power is consumed. A Class AB power amplifier incorporating this technique is designed at 433 MHz with programmable output power level. A two-tone test with frequency spacing of 1 MHz has been simulated and the reduction of the IMD3 is at least 10 dB.
Keywords :
CMOS analogue integrated circuits; intermodulation; linearisation techniques; power amplifiers; programmable circuits; CMOS RF power amplifier; Class AB power amplifiers; amplifier programmable output; frequency 1 MHz; frequency 433 MHz; frequency spacing; linearization technique; third-order inter-modulation products; transistor second-order derivative; CMOS technology; Linearity; Linearization techniques; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Testing; Transceivers; Wireless sensor networks;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250439