DocumentCode
3387177
Title
Infrared Optical Beam Induced Resistance Change (IROBIRCH) technology for IC failure localization and analysis
Author
Weaver, Kevin ; Acedo, Henry ; Gao, Geny
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
2002
fDate
21-24 Oct. 2002
Firstpage
172
Lastpage
175
Abstract
The Infrared Optical Beam Induced Resistance Change (IROBIRCH) is a new technique in reliability testing and failure analysis. This paper describes the theory and application of the IROBIRCH system. One of applications we performed is how to isolate areas of high and low resistance at a capacitor array area on a CMOS10 chip. The results and root cause analysis are detailed step by step.
Keywords
CMOS integrated circuits; OBIC; failure analysis; integrated circuit reliability; integrated circuit testing; CMOS chip; IC reliability testing; IROBIRCH technology; capacitor array; failure analysis; failure localization; infrared optical beam induced resistance change; Circuit faults; Energy consumption; Failure analysis; Integrated circuit testing; Laser beams; Optical beams; Photonic integrated circuits; Silicon; Surface resistance; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN
0-7803-7558-0
Type
conf
DOI
10.1109/IRWS.2002.1194261
Filename
1194261
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