Title :
Power devices on bulk gallium nitride and diamond substrates: An overview of ARPA-E´s SWITCHES program
Author :
Heidel, Timothy D. ; Gradzki, Pawel ; Henshall, David N.
Author_Institution :
U.S. Dept. of Energy, Adv. Res. Projects Agency - Energy, Washington, DC, USA
Abstract :
Wide bandgap (WBG) power semiconductor devices offer substantial energy efficiency opportunities in a wide range of applications. The Advanced Research Projects Agency-Energy (ARPA-E) has invested in WBG power semiconductor devices since 2010. ARPA-E´s ADEPT (Agile Delivery of Electrical Power Technologies) program, funded several teams to develop a range of SiC and GaN devices and demonstrate their efficacy in power converters. Despite recent progress, high cost remains an important barrier to the widespread adoption of WBG devices. Also, most WBG discrete devices demonstrated to date have had relatively low current ratings.
Keywords :
gallium compounds; power convertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; ADEPT program; ARPA-E; Advanced Research Projects Agency-Energy; Agile Delivery of Electrical Power Technologies program; GaN; GaN devices; SiC; SiC devices; WBG discrete devices; WBG power semiconductor devices; bulk gallium nitride; diamond substrates; energy efficiency opportunities; power converters; wide bandgap power semiconductor devices; Current density; Gallium nitride; Photonic band gap; Semiconductor diodes; Silicon carbide; Substrates; Switches;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175535
