DocumentCode :
3387227
Title :
Performance optimization under rise and fall parameters
Author :
Murgai, R.
Author_Institution :
Fujitsu Labs. of America Inc., Sunnyvale, CA, USA
fYear :
1999
fDate :
7-11 Nov. 1999
Firstpage :
185
Lastpage :
190
Abstract :
Typically, cell parameters such as the pin-to-pin intrinsic delays, load-dependent coefficients, and input pin capacitances have different values for rising and falling signals. The performance optimization algorithms, however, assume a single value for each parameter. No work has been done to study the impact of separate rise and fall values on the complexity of optimization. We take the first step towards understanding this impact. We pick two problems that have polynomial-time complexities if a single value for each cell parameter is assumed. The first problem is that of buffer insertion on a fixed topology net to maximize the required time at the source of the net. The second is the gate resizing problem (and the more general technology mapping problem) for minimizing the circuit delay under the simplest, load-independent delay model. We show that under separate rise and fall parameters, both these problems become NP-complete. To the best of our knowledge, this is the first such result showing the effect of rise and fall parameters on the complexity of performance optimization problems. We then address the important question of devising a good practical algorithm for local fanout optimization.
Keywords :
circuit complexity; circuit optimisation; delays; logic CAD; logic gates; NP-complete; buffer insertion; cell parameters; circuit delay; fixed topology net; gate resizing problem; local fanout optimization; performance optimization; polynomial-time complexity; rise and fall parameters; Capacitance; Circuits; Delay; Inverters; Laboratories; Libraries; Load modeling; Optimization; Pins; Polynomials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 1999. Digest of Technical Papers. 1999 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
ISSN :
1092-3152
Print_ISBN :
0-7803-5832-5
Type :
conf
DOI :
10.1109/ICCAD.1999.810646
Filename :
810646
Link To Document :
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