Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization

Author

Berthelemot, C. ; Vigier, P. ; Dumas, J.M. ; Clei, A. ; Palla, R. ; Harmand, J.C.

Author_Institution

ENSIL, Limoges Univ., France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

674

Lastpage

677

Abstract

The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 μm optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; integrated circuit noise; integrated circuit reliability; integrated optoelectronics; optical receivers; shot noise; 1.3 micrometre; 1.5 micrometre; HEMTs; III-V semiconductors; InAlAs-InGaAs; buffer layer; hole current; impact ionization; optoelectronic integrated circuits; sidegating effect; Electron devices; Electron optics; HEMTs; Indium compounds; Indium gallium arsenide; Integrated optics; MODFETs; Optical buffering; Optical devices; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492383

Filename

492383