DocumentCode
3387422
Title
17 Gb/s VCSEL driver using double-pulse asymmetric emphasis technique in 90-nm CMOS for optical interconnection
Author
Ohhata, Kenichi ; Imamura, Hironori ; Ohno, Toshinobu ; Taniguchi, Takaya ; Yamashita, Kiichi ; Yazaki, Toru ; Chujo, Norio
Author_Institution
Dept. of Electr. & Electron. Eng., Kagoshima Univ., Kagoshima, Japan
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
1847
Lastpage
1850
Abstract
This paper describes the design and experimental results of a 17 Gb/s vertical-cavity surface-emitting laser (VCSEL) driver using a double-pulse asymmetric emphasis technique. In this technique, the first pulse compensates for the parasitic capacitances and the second pulse compensates for the ringing, which enables a good eye opening even when the data rate increases. A test chip fabricated using a 90-nm CMOS technology generates a clearly open optical eye at a data rate of 17 Gb/s, which is approximately twice the VCSEL bandwidth.
Keywords
CMOS integrated circuits; capacitance; optical fibre communication; optical interconnections; surface emitting lasers; CMOS technology; VCSEL driver; bit rate 17 Gbit/s; double-pulse asymmetric emphasis technique; optical interconnection; parasitic capacitance; size 90 nm; vertical-cavity surface-emitting laser driver; Bandwidth; CMOS technology; Optical design; Optical interconnections; Optical pulses; Parasitic capacitance; Ring lasers; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537809
Filename
5537809
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