Title :
Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium
Author :
Marcon, J. ; Koumetz, S. ; Ketata, K. ; Ketata, M. ; Launay, P.
Author_Institution :
LCIA, INSA de Rouen, Mont Saint Aignan, France
Abstract :
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed
Keywords :
III-V semiconductors; annealing; beryllium; diffusion; doping profiles; gallium arsenide; indium compounds; point defects; semiconductor doping; semiconductor epitaxial layers; semiconductor process modelling; Be dopant diffusion; Boltzmann-Matano technique; InGaAs epitaxial layer; InGaAs:Be; concentration profile; model; point defect nonequilibrium; post-growth annealing; Boundary conditions; Degradation; Doping; Epitaxial layers; Gaussian approximation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Rapid thermal annealing; Semiconductor process modeling;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492392
