The breakdown characteristics of a new SOI high voltage device with Sandwich Buried oxide layer

Author

Wang, Taijun ; Luo, Xiaorong

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

23-25 July 2009

Firstpage

608

Lastpage

610

Abstract

A novel silicon-on-insulator (SOI) high voltage device structure is proposed. The structure is characterized by sandwich buried-layer (SBL SOI) consisting of two oxide layers and a polysilicon layer between them. Its breakdown voltage (BV) is shared by two oxide buried layers, and the electric field in the lower buried oxide layer is increased from about 80 V/mum of conventional SOI device to about 450 V/mum due to the holes located on the bottom interface of the polysilicon. Both result in an enhancement of breakdown voltage. 822 V SBL SOI diode is obtained in simulation. BV is increased by 32.6% compared with that of the conventional SOI diode in this paper. Moreover, charges collected on the bottom interface of the polysilicon shield the SOI layer and upper buried oxide layer from the back-gate bias effect for SBL SOI diode.

Keywords

buried layers; electric fields; sandwich structures; semiconductor device breakdown; semiconductor diodes; silicon compounds; silicon-on-insulator; SBL SOI diode; SOI high voltage device structure; Si-SiO₂; back-gate bias effect; breakdown voltage characteristics; buried oxide layer; polysilicon layer; sandwich buried-layer; silicon-on-insulator; voltage 822 V; Anodes; Breakdown voltage; Cathodes; Dielectrics; Diodes; Doping; Integrated circuit technology; Isolation technology; Permittivity; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on

Conference_Location

Milpitas, CA

Print_ISBN

978-1-4244-4886-9

Electronic_ISBN

978-1-4244-4888-3

Type

conf

DOI

10.1109/ICCCAS.2009.5250454

Filename

5250454