Title :
The breakdown characteristics of a new SOI high voltage device with Sandwich Buried oxide layer
Author :
Wang, Taijun ; Luo, Xiaorong
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel silicon-on-insulator (SOI) high voltage device structure is proposed. The structure is characterized by sandwich buried-layer (SBL SOI) consisting of two oxide layers and a polysilicon layer between them. Its breakdown voltage (BV) is shared by two oxide buried layers, and the electric field in the lower buried oxide layer is increased from about 80 V/mum of conventional SOI device to about 450 V/mum due to the holes located on the bottom interface of the polysilicon. Both result in an enhancement of breakdown voltage. 822 V SBL SOI diode is obtained in simulation. BV is increased by 32.6% compared with that of the conventional SOI diode in this paper. Moreover, charges collected on the bottom interface of the polysilicon shield the SOI layer and upper buried oxide layer from the back-gate bias effect for SBL SOI diode.
Keywords :
buried layers; electric fields; sandwich structures; semiconductor device breakdown; semiconductor diodes; silicon compounds; silicon-on-insulator; SBL SOI diode; SOI high voltage device structure; Si-SiO2; back-gate bias effect; breakdown voltage characteristics; buried oxide layer; polysilicon layer; sandwich buried-layer; silicon-on-insulator; voltage 822 V; Anodes; Breakdown voltage; Cathodes; Dielectrics; Diodes; Doping; Integrated circuit technology; Isolation technology; Permittivity; Silicon on insulator technology;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250454
