DocumentCode
3387544
Title
7C: IP Session: Embedded Memory Test & Repair Drives Higher Yield in Nanometer Technologies [Breaker page]
fYear
2005
fDate
1-5 May 2005
Firstpage
261
Lastpage
261
Abstract
With 90nm and below, the objective of high yields cannot be achieved without defect reduction. Since embedded memories have a higher defect density (twice that of logic), embedded memory test and repair solutions are becoming more critical than ever. This session of invited speakers will shed light on various aspects of the solution from design, manufacturing and yield perspective.
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium, 2005. Proceedings. 23rd IEEE
Conference_Location
Palm Springs, California, USA
ISSN
1093-0167
Print_ISBN
0-7695-2314-5
Type
conf
DOI
10.1109/VTS.2005.21
Filename
1443433
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