• DocumentCode
    3387544
  • Title

    7C: IP Session: Embedded Memory Test & Repair Drives Higher Yield in Nanometer Technologies [Breaker page]

  • fYear
    2005
  • fDate
    1-5 May 2005
  • Firstpage
    261
  • Lastpage
    261
  • Abstract
    With 90nm and below, the objective of high yields cannot be achieved without defect reduction. Since embedded memories have a higher defect density (twice that of logic), embedded memory test and repair solutions are becoming more critical than ever. This session of invited speakers will shed light on various aspects of the solution from design, manufacturing and yield perspective.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 2005. Proceedings. 23rd IEEE
  • Conference_Location
    Palm Springs, California, USA
  • ISSN
    1093-0167
  • Print_ISBN
    0-7695-2314-5
  • Type

    conf

  • DOI
    10.1109/VTS.2005.21
  • Filename
    1443433