DocumentCode :
3387564
Title :
Vertical cavity surface emitting lasers based on InP and related compounds-bottleneck and corkscrew
Author :
Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
715
Lastpage :
718
Abstract :
The author reviews the progress of surface emitting lasers ranging from 1.55 to 0.4 μm by considering materials and performance, including threshold, power output, polarization, RIN, linewidth, spontaneous emission control, and photon recycling. Some possible applications are discussed
Keywords :
III-V semiconductors; indium compounds; optical interconnections; semiconductor lasers; surface emitting lasers; 1.55 to 0.4 mum; GaAlAs-GaAs; GaInAs-GaAs; GaInAsP-InP; InP; InP substrate; RIN; VCSEL; linewidth; materials; optical interconnects; performance; photon recycling; polarization; power output; spontaneous emission control; threshold; vertical cavity surface emitting lasers; Gallium arsenide; Indium phosphide; Laser modes; Mirrors; Optical losses; Substrates; Surface emitting lasers; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.492395
Filename :
492395
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3387564
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