DocumentCode
3387564
Title
Vertical cavity surface emitting lasers based on InP and related compounds-bottleneck and corkscrew
Author
Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
fYear
1996
fDate
21-25 Apr 1996
Firstpage
715
Lastpage
718
Abstract
The author reviews the progress of surface emitting lasers ranging from 1.55 to 0.4 μm by considering materials and performance, including threshold, power output, polarization, RIN, linewidth, spontaneous emission control, and photon recycling. Some possible applications are discussed
Keywords
III-V semiconductors; indium compounds; optical interconnections; semiconductor lasers; surface emitting lasers; 1.55 to 0.4 mum; GaAlAs-GaAs; GaInAs-GaAs; GaInAsP-InP; InP; InP substrate; RIN; VCSEL; linewidth; materials; optical interconnects; performance; photon recycling; polarization; power output; spontaneous emission control; threshold; vertical cavity surface emitting lasers; Gallium arsenide; Indium phosphide; Laser modes; Mirrors; Optical losses; Substrates; Surface emitting lasers; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492395
Filename
492395
Link To Document