Title :
GaAs insertion enhances SINCGARS RF preselector
Author :
Peterson, David A.
Author_Institution :
ITT Aerosp., Fort Wayne, IN, USA
Abstract :
A new class of RF devices has been developed that reduces the size and power consumption of electronically tunable RF preselector filters. Critical tuning components have been integrated onto a GaAs chip to reduce relative component tolerances and improve frequency accuracy across a broad tuning range. This capability was achieved through the development of a GaAs microwave switch with a resistance range of 100000:1. A two-pole, electronically tunable filter fabricated with this device achieved an unloaded resonator Q of 100 and an insertion loss of 4 dB over the 30-88 MHz frequency range. This switched capacitor array provides the capability to house a two-pole electronically tunable filter in a volume of less than 1 in3 and tune across a 3:1 frequency range with less than 2 mW of DC power consumption
Keywords :
III-V semiconductors; MMIC; gallium arsenide; military equipment; radio receivers; radiofrequency filters; semiconductor switches; tuning; 2 mW; 30 to 88 MHz; 4 dB; GaAs chip; HF; III-V semiconductors; RF devices; VHF; electronically tunable RF preselector filters; frequency accuracy; frequency range; insertion loss; microwave switch; power consumption; resistance range; switched capacitor array; two pole filter; unloaded resonator Q; Capacitors; Energy consumption; Gallium arsenide; Insertion loss; Microwave devices; Microwave filters; Radio frequency; Resonator filters; Switches; Tuning;
Conference_Titel :
Tactical Communications Conference, 1992. Vol. 1 Tactical Communications: Technology in Transition., Proceedings of the
Conference_Location :
Fort Wayne, IN
Print_ISBN :
0-7803-0745-3
DOI :
10.1109/TCC.1992.247155