Temperature dependences of GaInAsP/InP compressively-strained quantum-wire lasers fabricated by EB lithography and 2-step OMVPE growth

Author

Kojima, Takashi ; Tamura, Munehisa ; Shin, Ki-Chul ; Tamura, Shigeo ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

731

Lastpage

734

Abstract

Temperature dependences of 1.5 μm wavelength GaInAsP/InP compressively-strained (CS) single-quantum-well lasers with quantum-wire as active region (15-28 nm) were measured and compared with those of quantum-film lasers fabricated on the same wafer. As the result, better lasing properties of the quantum-wire structure lasers over quantum-film lasers were confirmed for the first time at a temperature below 193 K

Keywords

III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.5 micron; 193 K; EB lithography; GaInAsP-InP; compressively-strained single-quantum-well laser; fabrication; quantum-film laser; quantum-wire laser; temperature dependence; two-step OMVPE growth; Capacitive sensors; Indium phosphide; Lithography; Optical buffering; Optical films; Semiconductor lasers; Temperature dependence; Threshold current; Wet etching; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492399

Filename

492399