Title :
High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy
Author :
Savolainen, P. ; Toivonen, M. ; Salokatve, A. ; Asonen, H. ; Murison, R.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T0 value of about 100 K in the temperature range 20-80°C and low threshold current density of 87 A/cm2 per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 1.3 micron; 20 to 80 C; InAsP-InGaP-InP; all solid source molecular beam epitaxy; characteristic temperature; elevated temperature operation; growth; optoelectronic device; strain-compensated multi-quantum well laser; threshold current density; Conducting materials; Indium phosphide; Molecular beam epitaxial growth; Optical transmitters; Quantum well devices; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492400
