Title :
Multilayer multicomponent semiconductor structures for microelectronics formed using laser and thin film technology
Author :
Kiyak, S.G. ; Bonchik, O.Y. ; Pokhmurska, A.V. ; Savitsky, G.V.
Author_Institution :
Inst. of Appl. Problems of Mech. & Math., Acad. of Sci., Lviv, Ukraine
Abstract :
The authors present technological doping processes which enable one to obtain the smallest thicknesses of doped layers (300-500 nm). The use of a laser as a technological tool makes it possible to reduce the thickness of modified layers to 10 nm and to build a fully-automatic low-temperature technology for shallow p-n junctions and devices needed in the future.
Keywords :
chemical interdiffusion; laser materials processing; p-n junctions; semiconductor doping; semiconductor superlattices; 10 nm; 300 to 500 nm; doped layers; doping; fully-automatic low-temperature technology; laser solid phase diffusion; laser technology; microelectronics; multilayer multicomponent semiconductor structures; shallow p-n junctions; thin film technology; Chemical lasers; Contacts; Gallium arsenide; Indium phosphide; Microelectronics; Nonhomogeneous media; Optical materials; Semiconductor device doping; Semiconductor lasers; Solid lasers;
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
DOI :
10.1109/LEOSST.1996.540668
