Title :
Fabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities
Author :
Schur, R. ; Nishioka, M. ; Kitamura, M. ; Watabe, H. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We demonstrate the fabrication of a vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al0.2Ga0.8As distributed Bragg-reflector mirrors. The length of the microcavity was 1 λ(λ=1007 nm). Very narrow linewidths of the spontaneous PL-emission was observed as an clear evidence of the cavity effect. The PL-linewidth of reference samples that were grown without a cavity proves to be significantly broader
Keywords :
III-V semiconductors; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum dots; spontaneous emission; AlAs-Al0.2Ga0.8As; InGaAs; MOCVD growth; PL-linewidth; distributed Bragg-reflector mirrors; fabrication; optical properties; self assembled Stranski-Krastanow quantum dots; spontaneous emission; vertical microcavity laser; Carrier confinement; Indium gallium arsenide; Laser modes; MOCVD; Microcavities; Optical device fabrication; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492404
