• DocumentCode
    3387809
  • Title

    Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs

  • Author

    Bhardwaj, Shubhendu ; Sensale-Rodriguez, Berardi ; Xing, Huili Grace ; Volakis, John L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    We provide an initial perturbation to the channel, by applying a small E-field pulse of amplitude Ex=10-3 V/cm at the center. Power emitted due to positive feedback is then recorded at the measurement planes, depicted in Fig. 1b. Shown in Fig. 6a is the simulated emitted spectrum for two devices. Sharp self-sustained oscillations are observed at the plasmonic resonance frequencies. As expected, these resonance frequencies are functions of grating period (L), and the electron density (n). The simulations predict stronger resonances for higher orders at low temperatures, thus higher carrier mobilities (see Fig 6b). Our simulations are able to predict for the first time the terahertz power-emission levels of RTD-gated plasma wave HEMTs.
  • Keywords
    high electron mobility transistors; semiconductor device models; terahertz wave devices; E-field pulse; THz emission; electron density; full-wave hydrodynamic model; grating period; grating-gate RTD-gated plasma wave HEMT; plasmonic resonance frequencies; self-sustained oscillations; terahertz power-emission; Finite difference methods; Gratings; HEMTs; Logic gates; Plasmons; Q measurement; Time-domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175567
  • Filename
    7175567