DocumentCode
3387809
Title
Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs
Author
Bhardwaj, Shubhendu ; Sensale-Rodriguez, Berardi ; Xing, Huili Grace ; Volakis, John L.
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear
2015
fDate
21-24 June 2015
Firstpage
85
Lastpage
86
Abstract
We provide an initial perturbation to the channel, by applying a small E-field pulse of amplitude Ex=10-3 V/cm at the center. Power emitted due to positive feedback is then recorded at the measurement planes, depicted in Fig. 1b. Shown in Fig. 6a is the simulated emitted spectrum for two devices. Sharp self-sustained oscillations are observed at the plasmonic resonance frequencies. As expected, these resonance frequencies are functions of grating period (L), and the electron density (n). The simulations predict stronger resonances for higher orders at low temperatures, thus higher carrier mobilities (see Fig 6b). Our simulations are able to predict for the first time the terahertz power-emission levels of RTD-gated plasma wave HEMTs.
Keywords
high electron mobility transistors; semiconductor device models; terahertz wave devices; E-field pulse; THz emission; electron density; full-wave hydrodynamic model; grating period; grating-gate RTD-gated plasma wave HEMT; plasmonic resonance frequencies; self-sustained oscillations; terahertz power-emission; Finite difference methods; Gratings; HEMTs; Logic gates; Plasmons; Q measurement; Time-domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175567
Filename
7175567
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