DocumentCode
3387819
Title
InP/InAlAs/InGaAs-quantum wires
Author
Kappelt, M. ; Turck, V. ; Grundmann, M. ; Cerva, H. ; Bimberg, D.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fYear
1996
fDate
21-25 Apr 1996
Firstpage
757
Lastpage
760
Abstract
Single InGaAs quantum wires and stacked InGaAs quantum wires with InAlAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapor deposition. We have found growth conditions where the InAlAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for the growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wires; InAlAs barrier; InP; InP-InAlAs-InGaAs; InP/InAlAs/InGaAs quantum wire; V-grooved InP substrate; fabrication; growth; low pressure metal-organic chemical vapor deposition; resharpening effect; single InGaAs quantum wire; stacked InGaAs quantum wire; Buffer layers; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MOCVD; Quantum dots; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492406
Filename
492406
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