Title :
InP/InAlAs/InGaAs-quantum wires
Author :
Kappelt, M. ; Turck, V. ; Grundmann, M. ; Cerva, H. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Single InGaAs quantum wires and stacked InGaAs quantum wires with InAlAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapor deposition. We have found growth conditions where the InAlAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for the growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wires; InAlAs barrier; InP; InP-InAlAs-InGaAs; InP/InAlAs/InGaAs quantum wire; V-grooved InP substrate; fabrication; growth; low pressure metal-organic chemical vapor deposition; resharpening effect; single InGaAs quantum wire; stacked InGaAs quantum wire; Buffer layers; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MOCVD; Quantum dots; Substrates; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492406
