DocumentCode :
3387895
Title :
1.55 μm MQW-DFB Q-switch two-section laser for high frequency-short pulse generation
Author :
Goutain, E. ; Renaud, J.C. ; Krakowski, M. ; Glastre, G. ; Rondi, D. ; Blondeau, R.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
769
Lastpage :
772
Abstract :
The generation of short optical pulses at 1.55 μm with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 μm), is applied to the saturable absorber. The LD fabrication and characteristics are discussed
Keywords :
Q-switching; distributed feedback lasers; electro-optical modulation; integrated optics; laser transitions; optical fabrication; optical saturable absorption; optical solitons; optical transmitters; quantum well lasers; 0.8 V; 1.55 micron; CW forward mode; MQW-DFB Q-switch LD; fabrication; high frequency short pulse generation; modulated voltage; optical TDM systems; optical communication systems; saturable absorber section; short optical pulses; soliton transmission; two-section laser diode; two-segment configuration; Laser modes; Optical fiber communication; Optical frequency conversion; Optical pulse generation; Optical pulses; Optical solitons; Power system modeling; Quantum well devices; Time division multiplexing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.492409
Filename :
492409
Link To Document :
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