DocumentCode :
3387926
Title :
Sense amplifier with offset mismatch calibration for sub 1-V DRAM core operation
Author :
Moon, Jinyeong ; Chung, Byongtae
Author_Institution :
DRAM Design Team II, Hynix Semicond. Inc., Icheon, South Korea
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
3501
Lastpage :
3504
Abstract :
In this paper, a sense amplifier circuit, which aims to operate with 1V or less supply voltage, is presented. While a conventional sense amplifier uses inverters connected in a cross-coupled manner without any special timing phase, the proposed sense amplifier circuit employs a calibration phase to provide offset voltage margin relaxation. The relaxed amount can be utilized for lowering Vcore, the DRAM core voltage, or increasing the number of Wordlines per Bitline. Also, it can be used for ensuring correct data operations in DRAM fabricated with severer process variation.
Keywords :
DRAM chips; amplifiers; invertors; DRAM core operation; DRAM core voltage; calibration phase; inverters; offset mismatch calibration; sense amplifier circuit; voltage margin relaxation; Calibration; Circuits; Feedback; Inverters; MOSFETs; Operational amplifiers; Proposals; Random access memory; Transfer functions; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537834
Filename :
5537834
Link To Document :
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