High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 μm DFB laser diodes

Author

Steinhagen, F. ; Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Göbe, R. ; Kuphal, E. ; Hartnagel, H.L. ; Burkhard, H.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

777

Lastpage

780

Abstract

The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 μm laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 1.55 micron; 23 GHz; AlGaInAs-InP; DFB laser diodes; MBE/MOVPE grown epitaxial structure; QW lasers; characterization; complex-coupled strain-compensated LD; distributed feedback lasers; high-speed operation; intensity modulation bandwidth; large signal behaviour; partly loss-coupled LDs; Capacitive sensors; Chemical lasers; Diode lasers; Gratings; Identity-based encryption; Indium phosphide; Laser feedback; Molecular beam epitaxial growth; Optical coupling; Optical feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492411

Filename

492411