A monolithic 1 to 50 GHz distributed amplifier with 20 dBm output power

Author

Perdomo, J. ; Hughes, B. ; Kondoh, H. ; Studebaker, L. ; Zhou, G. ; Taylor, T. ; Li, C. ; Ma, T.

Author_Institution

Hewlett-Packard Co., Santa Rose, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

203

Lastpage

206

Abstract

A monolithic 1 to 50 GHz distributed amplifier has been developed using a MODFET IC process to demonstrate a saturated power in excess of 20 dBm. The power output at the -1 dB gain compression point is greater than 18 dBm across the frequency range. The small signal gain is 8.5 dB+or-0.3 dB, and both input and output return loss are less than -10 dB. Physical layout considerations placed constraints on the design that resulted in a compromise between gain, RF voltage drive, and gain flatness.<>

Keywords

MMIC; high electron mobility transistors; integrated circuit technology; losses; microwave amplifiers; power amplifiers; 1 to 50 GHz; 8.5 dB; MODFET IC process; RF voltage drive; gain flatness; input return loss; monolithic distributed amplifier; output return loss; power output; saturated power; small signal gain; Cutoff frequency; Distributed amplifiers; FETs; Gain; HEMTs; MODFET integrated circuits; Microwave technology; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247190

Filename

247190