DocumentCode
3388050
Title
Digital etching of GaAs. The mechanism and the application
Author
Aoyagi, Y. ; Meguro, T.
Author_Institution
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
fYear
1996
fDate
5-9 Aug. 1996
Firstpage
51
Lastpage
52
Abstract
In this paper, the phenomena of photo-assisted digital etching using a tunable DUV laser is introduced for gallium arsenide semiconductors and the mechanism of the digital etching is discussed.
Keywords
III-V semiconductors; ULSI; gallium arsenide; laser beam etching; laser materials processing; nanotechnology; GaAs; ULSI; digital etching; gallium arsenide; photo-assisted digital etching; semiconductors; tunable DUV laser; Atomic layer deposition; Bonding; Chemical technology; Controllability; Etching; Fluid flow; Gallium arsenide; Laser beams; Substrates; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location
Keystone, CO, USA
Print_ISBN
0-7803-3175-3
Type
conf
DOI
10.1109/LEOSST.1996.540674
Filename
540674
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