Quarter, half, and one watt wideband millimeter-wave MMIC amplifiers

Author

Goldfarb, M. ; Erfany, B. ; Bernkopf, P.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

195

Lastpage

198

Abstract

Three wideband MMIC (monolithic microwave integrated circuit) power amplifier configurations have been realized which deliver output power of 0.25, 0.5, and 1.0 W in Ka-band using 0.25- mu m, single-recess, ion-implanted MESFETs. Reactive matching and combining techniques are employed on-chip in the 0.25- and 0.5-W versions. The 1.0-W version utilizes off-chip in-phase combiners. Power-added efficiencies of 8% to 12% have been measured as well as small-signal gains between 6 and 8 dB, depending on the configuration.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; power amplifiers; wideband amplifiers; 0.25 micron; 0.25 to 1.0 W; 6 to 8 dB; 8 to 12 percent; Ka-band; MMIC; in-phase combiners; ion-implanted MESFETs; power amplifier configurations; reactive combining; reactive matching; wideband millimeter-wave MMIC amplifiers; Broadband amplifiers; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Millimeter wave integrated circuits; Millimeter wave technology; Monolithic integrated circuits; Power amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247192

Filename

247192